Semiconductor

  • CdSe Cadmium Selenide

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    Dimensions10 mm × 10 mm × 0.5 mm

    Growth TechniquePhysical Vapor Transport

    Orientation(0001)
    (11-20)
    (10-10)

    Surface1 side / 2 sides polished

    StructureHexagonal

    Lattice Constanta = 0.429 nm
    c = 0.702 nm

    Melting Point1268 °C

    Density5.81 g/cm3

    Thermal Expansion Coefficient6.26 × 10-6 K-1 @ a-Achse
    4.28 × 10-6 K-1 @ c-Achse

    Dielectric Constant10.2 @ 300 K

    Thermal Conductivity0.04 W cm-1 K-1 @ 300 K

    Electron Mobility900 cm2 V-1 s-1 @ 300 K

    Band Gap1.74 eV

  • CdS Cadmium Sulfide

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    Dimensions10 mm × 10 mm × 0,5 mm
    max. 25 mm × 25 mm × 15 mm

    Growth TechniquePhysical Vapor Transport

    Orientation(0001)
    (11-20)
    (10-10)

    Surface1 side / 2 sides polished

    StructureHexagonal

    Lattice Constanta = 0.414 nm
    c = 0.672 nm

    Melting Point1287 °C

    Density4.82 g/cm3

    Thermal Expansion Coefficient4.6 × 10-6 K-1 @ a-Achse
    2.5 × 10-6 K-1 @ c-Achse

    Dielectric Constant8.9 @ 300 K

    Thermal Conductivity2.7 W cm-1 K-1 @ 300 K

    Electron Mobility250 cm2 V-1 s-1 @ 300 K

    Band Gap2.42 eV

  • CdTe Cadmium Telluride

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    Dimensions10 mm × 10 mm × 0.5 mm

    Growth TechniquePhysical Vapor Transport

    Orientation(100)
    (110)
    (111)

    Surface1 side / 2 sides polished

    StructureCubic

    Lattice Constanta = 0.648 nm

    Melting Point1091 °C

    Density5.85 g/cm3

    Thermal Expansion Coefficient5.9 × 10-6 K-1

    Dielectric Constant11.1 @ 300 K

    Thermal Conductivity6.2 W cm-1 K-1 @ 300 K

    Electron Mobility700 cm2 V-1 s-1 @ 300 K

    Band Gap1.56 eV

  • InSb Gallium Antimonide

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    DimensionsØ 2" - 3"

    Growth TechniqueLiquid Encapsulated Czochralski / Bridgman

    Orientation(100)
    (110)
    (111)

    Dopingundoped, Zn, Te

    Surface1 side polished

    StructureCubic (Zincblende)

    Lattice Constanta = 0.648 nm

    Melting Point527 °C

    Density5.77 g/cm3

    Thermal Expansion Coefficient5.37 × 10-6K-1

    Dielectric Constant16.8 @ 300 K

    Thermal Conductivity0.18 W cm-1K-1

    Electron Mobility7.7×104cm2 V-1s-1@ 300 K

    Band Gap0.17 eV

  • GaSb Gallium Antimonide

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    DimensionsØ 2" - 3"

    Growth TechniqueLiquid Encapsulated Czochralski / Bridgman

    Orientation(100)
    (110)
    (111)

    Dopingundoped, Zn, Te

    Surface1 side polished

    StructureCubic (Zincblende)

    Lattice Constanta = 0.609 nm

    Melting Point712 °C

    Density5.61 g/cm3

    Thermal Expansion Coefficient7.75 × 10-6K-1

    Dielectric Constant15.7 @ 300 K

    Thermal Conductivity0.32 W cm-1K-1

    Electron Mobility3000 cm2 V-1s-1@ 300 K

    Band Gap0.726 eV

  • GaAs Gallium Arsenide

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    DimensionsØ 2" - 3"

    Growth TechniqueLiquid Encapsulated Czochralski / Bridgman

    Orientation(100)
    (110)
    (111)

    Dopingundoped, Si, Zn, Cr, Te

    Surface1 side polished

    StructureCubic (Zincblende)

    Lattice Constanta = 0.565 nm

    Melting Point1238 °C

    Density5.32 g/cm3

    Thermal Expansion Coefficient5.8 × 10-6K-1

    Dielectric Constant12.85 @ 300 K

    Thermal Conductivity0.55 W cm-1K-1

    Electron Mobility8500 cm2 V-1s-1@ 300 K

    Band Gap1.424 eV

  • GaP Gallium Phosphide

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    DimensionsØ 2"

    Growth TechniqueLiquid Encapsulated Czochralski

    Orientation(100)
    (110)
    (111)

    Dopingundoped, S

    Surface1 side polished

    StructureCubic (Zincblende)

    Lattice Constanta = 0.545 nm

    Melting Point1477 °C

    Density4.14 g/cm3

    Thermal Expansion Coefficient4.65 × 10-6K-1

    Dielectric Constant11.1 @ 300 K

    Thermal Conductivity1.1 W cm-1K-1

    Electron Mobility250 cm2 V-1s-1@ 300 K

    Band Gap2.26 eV

  • Ge Germanium

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    DimensionsØ 2" - 4"

    Growth TechniqueCzochralski

    Orientation(100)
    (110)
    (111)

    Dopingundoped, In, Ga, Sb

    Surface1 side / 2 sides polished

    StructureCubic

    Lattice Constanta = 0.567 nm

    Melting Point937.4 °C

    Density5.323 g/cm3

    Thermal Expansion Coefficient2.6 × 10-6K-1

    Band Gap0.67 eV

  • InAs Indium Arsenide

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    DimensionsØ 2" - 4"

    Growth TechniqueLiquid Encapsulated Czochralski

    Orientation(100)
    (110)
    (111)

    Dopingundoped

    Surface1 side polished

    StructureCubic (Zincblende)

    Lattice Constanta = 0.606 nm

    Melting Point942 °C

    Density5.68 g/cm3

    Thermal Expansion Coefficient4.52 × 10-6K-1

    Dielectric Constant15.15 @ 300 K

    Thermal Conductivity0.27 W cm-1K-1

    Electron Mobility≤ 4×104cm2 V-1s-1@ 300 K

    Band Gap0.354 eV

  • InP Indium Phosphide

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    DimensionsØ 2" - 3"

    Growth TechniqueLiquid Encapsulated Czochralski

    Orientation(100)
    (110)
    (111)

    Dopingundoped, Sn, S, Fe, Zn

    Surface1 side / 2 sides polished

    StructureCubic (Zincblende)

    Lattice Constanta = 0.587 nm

    Melting Point1060 °C

    Density4.81 g/cm3

    Thermal Expansion Coefficient4.60 × 10-6K-1

    Dielectric Constant12.5 @ 300 K

    Thermal Conductivity0.68 W cm-1K-1

    Electron Mobility 5400 cm2 V-1s-1@ 300 K

    Band Gap1.344 eV

  • Si Silicon

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    DimensionsØ 2" - 6" (max. Ø 8")

    Growth TechniqueCzochralski / Floating Zone

    Orientation(100)
    (110)
    (111)

    Dopingundoped, B, P, As, Sb

    Surface1 side / 2 sides polished

    StructureCubic

    Lattice Constanta = 0.543 nm

    Melting Point1414 °C

    Density2.329 g/cm3

    Thermal Expansion Coefficient5.7 × 10-6K-1

    Band Gap1.1 eV

  • SiC Silicon Carbide

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    Dimensions10 mm × 10 mm × 0.3 mm

    Growth TechniqueMOCVD

    Orientation(0001)

    Stacking Sequence6H-ABCACB
    4H-ABCA

    Surface1 side polished (Si Substrat)

    StructureHexagonal

    Lattice Constanta = 0.308 nm
    c = 1.508 nm

    Melting Point2700 °C

    Density3.217 g/cm3

    Thermal Expansion Coefficient10.3 × 10-6K-1

  • ZnSe Zinc Selenide

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    Dimensions10 mm × 10 mm × 0.5 mm

    Growth TechniquePhysical Vapor Transport

    Orientation(100)
    (110)
    (111)

    Surface1 side / 2 sides polished

    StructureCubic

    Lattice Constanta = 0.567 nm

    Melting Point1517 °C

    Density5.264 g/cm3

    Thermal Expansion Coefficient7.1 × 10-6K-1

    Dielectric Constant9.7 @ 300 K

    Thermal Conductivity13 W cm-1K-1@ 300 K

    Electron Mobility500 cm2 V-1s-1@ 300 K

    Band Gap2.82 eV

  • ZnS Zinc Sulfide

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    Dimensions10 mm × 10 mm × 0.5 mm

    Growth TechniqueBridgman

    Orientation(100)
    (110)
    (111)

    Surface1 side / 2 sides polished

    StructureCubic

    Lattice Constanta = 0.541 nm

    Melting Point1830 °C

    Density4.09 g/cm3

    Thermal Expansion Coefficient6.6 × 10-6K-1

    Dielectric Constant8.3 @ 300 K

    Thermal Conductivity16.7 W cm-1K-1@ 300 K

    Electron Mobility340 cm2 V-1s-1@ 300 K

    Band Gap3.54 eV

  • ZnTe Zinc Telluride

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    Dimensions10 mm × 10 mm × 0.5 mm

    Growth TechniqueBridgman

    Orientation(100)
    (110)
    (111)

    Surface1 side / 2 sides polished

    StructureCubic

    Lattice Constanta = 0.610nm

    Melting Point1295 °C

    Density5.63 g/cm3

    Thermal Expansion Coefficient8.3 × 10-6K-1

    Dielectric Constant9.7 @ 300 K

    Thermal Conductivity0.108 W cm-1K-1@ 300 K

    Electron Mobility350 cm2 V-1s-1@ 300 K

    Band Gap2.23 eV

Crystals are one of the major pillars of modern semiconductor and optical technologies. Due to the diversity of crystal properties and growth techniques, crystal growth is a highly interdisciplinary subject that requires expertise in physics, chemistry, materials science and engineering.

As the representative of the world’s leading crystal manufacturers Alineason merges various crystal growth techniques into a wide product spectrum of almost all crystals with technological importance, including both bulk crystals and single crystalline wafers and substrates. To meet your particular demand, the crystals can be customized to have individual dimension, doping, and orientation.

Category Specifications

  • Wafers and substrates of elementary and compound semiconductors
  • Specifications beyond the standard offers (e.g. dimensions, polishing, orientation and doping) on request