Oxide
LSAT (LaAlO3 ) 0,3(Sr2AlTaO6)0,7
Dimensions10 mm × 10 mm × 0.5 mm
max. Ø 2"Growth TechniqueCzochralski
Orientation(100)
(110)
(111)Dopingundoped
Surface1 side / 2 sides polished
StructureCubic
Lattice Constanta = 0.387 nm
Melting Point1840 °C
Density6.74 g/cm3
Thermal Expansion Coefficient10 × 10-6 K-1
Dielectric Constant~ 22
Hardness6.5 M
PMN-PT (PbMg0.33Nb0.67)1-x(PbTiO3)x
Dimensions10 mm × 10 mm × 1 mm
max. Ø 50 mm × 30 mmGrowth TechniqueBridgman (modified)
Orientation(100)
(110)
(111)Dopingundoped
Surface1 side / 2 sides polished
StructureRhombohedral (Pseudo-Cubic)
Lattice Constanta = 0.402 nm
Melting Point1280 °C
Density8.1 g/cm3
Thermal Expansion Coefficient9.5 × 10-6 K-1 (PT = 0.27 - 0.30)
> 10 × 10-6 K-1 (PT = 0.30 - 0.33)Dielectric Constant4000 - 6000 @ 1kHz
Refractive Index1.6216 @ 5.4 µm
Al2O3 Aluminum Oxide (Sapphire)
Dimensions10 mm × 10 mm × 0.5 mm
max. Ø 3"Growth TechniqueKyropoulos
Orientation(11-20) a-cut
(1-102) r-cut
(10-10) m-cut
(0001) c-cutDopingundoped, Cr, Ti
Surface1 side / 2 sides polished
StructureHexagonal (Corundum)
Lattice Constanta = 0.476 nm
c = 1.299Melting Point2040 °C
Density3.98 g/cm3
Thermal Expansion Coefficient7.5 × 10-6 K-1
Dielectric Constant9.40 @ a-axis
11.58 @ c-axisBaTiO3 Barium Titanate
Dimensions5 mm × 5 mm × 0.5 mm
10 mm × 10 mm × 0.5 mmGrowth TechniqueTop Seeded Solution Growth
Orientation(100)
(110)
(111)Dopingundoped
Surface1 side / 2 sides polished
StructureTetragonal (9 °C < T < 130,5 °C)
Perovskite TypeLattice Constanta = 0.399 nm
c = 0.404 nmMelting Point1600 °C
Density6.02 g/cm3
Dielectric Constantεa = 3700, εc = 135 (frei)
εa = 2400, εc = 60 (geklemmt)Refractive Indexn0 = 2.416 @ 632.8 nm
ne = 2.363 @ 632.8 nmHardness5 M
Bi4Ge3O12 Bismuth Germanate (BGO12)
DimensionsØ 2" (max. Ø 4")
as substrates or prismGrowth TechniqueCzochralski
Orientation(100)
Dopingundoped
Surface1 side / 2 sides polished
StructureCubic
Lattice Constanta = 1.052 nm
Melting Point1045 °C
Density7.13 g/cm3
Thermal Expansion Coefficient7.0 × 10-6 K-1
Dielectric Constantε11 = 40
Refractive Index2.05602 @ 1 μm
Hardness5 M
Bi12GeO20 Bismuth Germanate (BGO20)
Dimensions10 mm × 10 mm × 0.5 mm
as substrates or prismGrowth TechniqueCzochralski
Orientation(100)
(110)Dopingundoped
Surface1 side / 2 sides polished
StructureCubic
Lattice Constanta = 1.015 nm
Melting Point930 °C
Density9.20 g/cm3
Dielectric Constantε11 = 40
Refractive Index2.45 @ 632.8 nm
Hardness4.5 M
Bi12SiO20 Bismuth Silicate (BSO)
Dimensions5 mm × 5 mm × 0.5 mm
Growth TechniqueCzochralski
Orientation(100)
(110)Dopingundoped
Surface1 side / 2 sides polished
StructureCubic
Lattice Constanta = 1.015 nm
Melting Point900 °C
Density9.2 g/cm3
Dielectric Constant56
Refractive Index2.54 @ 632.,8 nm
Hardness4.5 M
CdWO4 Cadmium Tungstate
Dimensionsmax. Ø 35 mm × 200 mm
Growth TechniqueCzochralski
Orientation(101)
Dopingundoped
Surface1 side / 2 sides polished
StructureMonoclinic
Lattice Constanta = 0.503 nm
b = 0.586 nm
c = 0.507 nm
β = 91.52 °Melting Point1325 °C
Density7.9 g/cm3
Thermal Expansion Coefficient10.2 × 10-6 K-1
Refractive Index2.2 - 2.3 @ 475 nm
Hardness4 - 4.5 M
CaCO3 Calcium Carbonate
Dimensions10 mm × 10 mm × 0.5 mm
Growth TechniqueGEL Growth Technique
Orientationundoped
Surface1 side / 2 sides polished
StructureTrigonal
Lattice Constanta = 0.499 nm
c = 1.708 nmMelting Point1339 °C
Density2.711 g/cm3
Thermal Expansion Coefficient24.39 × 10-6 K-1 @ a-axis
5.68 × 10-6 K-1 @ c-axisRefractive Indexn0 = 1.6654 @ 509 nm
ne = 1.4898 @ 509 nmHardness3 M
Lu2SiO5:Ce Dilutetium Silicon Pentaoxide
Dimensionsmax. Ø 60 mm × 50 mm
Growth TechniqueBridgman
Orientation(0001) z-cut
DopingCe
Surface1 side / 2 sides polished
StructureTrigonal
Lattice Constanta = 1.425 nm
b = 1.024 nm
c = 0.664 nm
γ = 122 °Melting Point2047 °C
Density7.4 g/cm3
Thermal Expansion Coefficient19.5 × 10-6 K-1
Refractive Index1.82 @ 418 nm
Hardness5.8 M
Gd3Ga5O12 Gadolinium Gallium Garnet (GGG)
Dimensions10 mm × 10 mm × 0.5 mm
max. Ø 3'' × 100 mmGrowth TechniqueCzochralski
Orientation(111)
Dopingundoped
Surface1 side / 2 sides polished
StructureCubic
Lattice Constanta = 1.238 nm
Melting Point1750 °C
Density7.08 g/cm3
Thermal Expansion Coefficient8.2 × 10-6 K-1
Dielectric Constant30
Hardness7.5 M
LaAlO3 Lanthanum Aluminate
Dimensions10 mm × 10 mm × 0.5 mm
max. Ø 3"Growth TechniqueCzochralski
Orientation(100)
(110)
(111)Dopingundoped
Surface1 side / 2 sides polished
StructureRhombohedral (Pseudo-Cubic)
Lattice Constanta = 0.382 nm
α = 90.5 °Melting Point2100 °C
Density6.52 g/cm3
Thermal Expansion Coefficient9.2 × 10-6 K-1
Dielectric Constant24.5
Hardness6.5 M
LaSrAlO4 Lanthanum Strontium Aluminate
Dimensions10 mm × 10 mm × 0.5 mm
Growth TechniqueCzochralski
Orientation(100)
Dopingundoped
Surface1 side / 2 sides polished
StructureTetragonal
Lattice Constanta = 0.376 nm
c = 1.263 nmMelting Point1650 °C
Density5.92 g/cm3
Thermal Expansion Coefficient10 × 10-6 K-1
Dielectric Constant16.8
Hardness6 - 6.5 M
PbWO4 Lead Tungstate
Dimensionsmax. Ø 2" × 100 mm
Growth TechniqueCzochralski
Orientation(101)
Dopingundoped
Surface1 side / 2 sides polished
StructureTetragonal
Lattice Constanta = 0.542 nm
c = 1.205 nmMelting Point1123 °C
Density8.28 g/cm3
Thermal Expansion Coefficient10.2 × 10-6 K-1
Refractive Index2.3 @ 500 nm
Hardness3.5 - 4 M
LiAlO2 Lithium Aluminate
Dimensions10 mm × 10 mm × 0.5 mm
max. Ø 2" × 10 mmGrowth TechniqueCzochralski
Orientation(100)
Dopingundoped
Surface1 side / 2 sides polished
StructureTetragonal
Lattice Constanta = 0.517 nm
c = 0.629 nmMelting Point1900 °C
Density2.62 g/cm3
Thermal Expansion Coefficient7.1 × 10-6 K-1 @ a axis
15 × 10-6 K-1 @ c axisHardness6.5 M
LiGaO2 Lithium Gallium Oxide
Dimensionsmax. Ø 30 mm × 50 mm
Growth TechniqueCzochralski
Orientation(100)
Dopingundoped
Surface1 side / 2 sides polished
StructureOrthorhombic
Lattice Constanta = 0.540 nm
b = 0.501 nm
c = 0.638 nmMelting Point1600 °C
Density4.18 g/cm3
Thermal Expansion Coefficient11.8 × 10-6 K-1 @ a axis
12.5 × 10-6 K-1 @ b axis
3.7 × 10-6 K-1 @ c axisDielectric Constant7.0 @ a axis
6.5 @ b axis
8.3 @ c axisHardness7.5 M
LiNbO3 Lithium Niobate
Dimensions10 mm × 10 mm × 0.5 mm
max. Ø 4"Growth TechniqueCzochralski
Orientation(1120) x-cut
(1010) y-cut
(0001) z-cutDopingundoped, MgO
Surface1 side / 2 sides polished
StructureTrigonal
Lattice Constanta = 0.515 nm
c = 1.386 nmMelting Point1250 °C
Density4.64 g/cm3
Thermal Expansion Coefficient15.4 × 10-6 K-1 @ a axis
7.5 × 10-6 K-1 @ c axisRefractive Indexn0 = 2.286 @ 632.8 nm
ne = 2.203 @ 632.8 nmHardness5 M
LiTaO3 Lithium Tantalate
Dimensions10 mm × 10 mm × 0.5 mm
max. Ø 3"Growth TechniqueCzochralski
Orientation(1120) x-cut
(1010) y-cut
(0001) z-cutDopingundoped
Surface1 side / 2 sides polished
StructureTrigonal
Lattice Constanta = 0.515 nm
b = 1.378 nmMelting Point1650 °C
Density7.45 g/cm3
Thermal Expansion Coefficient1.61 × 10-6 K-1 @ a axis
4.10 × 10-6 K-1 @ a axisRefractive Indexn0 = 2.176 @ 632.8 nm
ne = 2.180 @ 632.8 nmHardness5.5 - 6 M
LiB3O5 Lithium Triborate (LBO)
Dimensionsmax. 30 mm × 30 mm × 25 mm
Growth TechniqueTop Seeded Solution Growth
Orientation(100)
Dopingundoped
Surface1 side / 2 sides polished
StructureOrthorhombic
Lattice Constant a = 0.845 nm
b = 0.738 nm
c = 0.514 nm
Z = 2Melting Point834 °C
Density2.47 g/cm3
Thermal Expansion Coefficient10.8 × 10-6 K-1 @ a axis
8.8 × 10-6 K-1 @ b axis
3.4 × 10-6 K-1 @ c axisDielectric Constant7.5 @ a axis
5.9 @ b axis
9.8 @ c axisHardness6 M
MgAl2O4 Magnesium Aluminate
DimensionsØ 35 mm × 60 mm
Growth TechniqueCzochralski
Orientation(100)
(110)
(111)Dopingundoped
Surface1 side / 2 sides polished
StructureCubic
Lattice Constanta = 0.808 nm
Melting Point2130 °C
Density3.64 g/cm3
Thermal Expansion Coefficient7.45 × 10-6 K-1
Refractive Index1.69 @ 1500 nm
Hardness8 M
MgO Magnesium Oxide
Dimensions10 mm × 10 mm × 0.5 mm
Ø 2" × 0.5 mmGrowth TechniqueArc Melting
Orientation(100)
(110)
(111)Dopingundoped
Surface1 side / 2 sides polished
StructureCubic
Lattice Constanta = 0.422 nm
Melting Point2852 °C
Density3.58 g/cm3
Thermal Expansion Coefficient12.8 × 10-6 K-1
Dielectric Constant9.8
Refractive Index1.6216 @ 5.4 µm
Hardness5.5 - 6 M
NdCaAlO4 Neodymium Calcium Aluminate
Dimensions10 mm × 10 mm × 0.5 mm
Growth TechniqueCzochralski
Orientation(100)
Dopingundoped
Surface1 side / 2 sides polished
StructureTetragonal
Lattice Constanta = 0.369 nm
c = 1.212 nmMelting Point1850 °C
Density5.56 g/cm3
Thermal Expansion Coefficient12 × 10-6 K-1
Dielectric Constant19.5
NdGaO3 Neodymium Gallium Oxide
Dimensions10 mm × 10 mm × 0.5 mm
Ø 2" × 0.5 mmGrowth TechniqueCzochralski
Orientation(100)
(110)
(111)Dopingundoped
Surface1 side / 2 sides polished
StructureOrthorhombic
Lattice Constanta = 0.543 nm
b = 0.550 nm
c = 0.771 nmMelting Point1600 °C
Density7.57 g/cm3
Thermal Expansion Coefficient7.8 × 10-6 K-1
Dielectric Constant25
Hardness5.9 M
KNbO3 Potassium Niobate
Dimensions10 mm × 10 mm × 0.5 mm
max 40 mm × 30 mmGrowth TechniqueTop Seeded Solution Growth
Orientation(110)
Dopingundoped
Surface1 side / 2 sides polished
StructureOrthorhombic
Perovskite TypeLattice Constanta = 0.569 nm
b = 0.397 nm
c = 0.572 nmMelting Point1050 °C
Density4.62 g/cm3
Thermal Expansion Coefficient5.01 × 10-6 K-1 @ a- and c axis
1.41 × 10-6 K-1 @ b axisRefractive Index2.41 @ a axis @ 430 nm
2.49 @ b axis @ 430 nm
2.27 @ c axis @ 430 nmHardness5 M
KTaO3 Potassium Tantalate
Dimensions10 mm × 10 mm × 0.5 mm
Growth TechniqueTop Seeded Flux Growth / Hydrothermal
Orientation(100)
(110)Dopingundoped
Surface1 side / 2 sides polished
StructureCubic
Lattice Constanta = 0.398 nm
Melting Point~ 1500 °C (noncongruently)
Density7.03 g/cm3
Thermal Expansion Coefficient4.027 × 10-6 K-1
Refractive Index2.4145 @ 633 nm
Hardness6 M
KTiOPO3 Potassium Titanyl Phosphate (KTP)
Dimensions10 mm × 10 mm × 0.5 mm
10 mm × 10 mm × 15 mm
as substrates or prismGrowth TechniqueHydrothermal
Orientation(001) z-cut
Dopingundoped
Surface1 side / 2 sides polished
StructureOrthorhombic
Lattice Constanta = 0.640 nm
b = 1.062 nm
c = 1.281 nm
Z = 8Melting Point~ 1172 °C (noncongruently)
Density3.01 g/cm3
Thermal Expansion Coefficient11.0 × 10-6 K-1 @ a-axis
9.0 × 10-6 K-1 @ b-axis
0.6 × 10-6 K-1 @ c-axisRefractive Index1.7787 @ a-axis @ 532 nm
1.7924 @ b-axis @ 532 nm
1.8873 @ c-axis @ 532 nmHardness5 M
SiO2 Silicon Dioxide (Quartz)
Dimensions10 mm × 10 mm × 0.5 mm
max. Ø 4"Growth TechniqueHydrothermal
Orientationx-, y-, z-cut
30 ° < α < 42.7 °Surface1 side / 2 sides polished
StructureHexagonal
Lattice Constanta = 0.491 nm
c = 0.541 nmMelting Point1610 °C
Density2.684 g/cm3
Thermal Expansion Coefficientα11 = 13.71 × 10-6 K-1
α33 = 7.480 × 10-6 K-1Refractive Index1.52 @ 2.0531 µm
Hardness7 M
SrxBa1-xNb2O6 Strontium Barium Niobate (SBN)
Dimensionsmax. 20 mm × 20 mm × 1 mm
Growth TechniqueCzochralski
Orientation(100)
Dopingundoped
Surface1 side / 2 sides polished
Stoichiometry0.60 < x < 0.75
StructureTetragonal
Lattice Constanta = 0.395 nm
b = 1.246 nmMelting Point1500 °C
Density5.40 g/cm3
Dielectric Constantε11 = 450
ε32 = 900Refractive Indexn0 = 2.312
ne = 2.273Hardness5.5 M
SrLaGaO4 Strontium Lanthanum Gallate
Dimensionsmax. Ø 1"
Growth TechniqueCzochralski
Orientation(100)
(110)
(001)Dopingundoped
Surface1 side / 2 sides polished
StructureTetragonal
Lattice Constanta = 0.384 nm
c = 1.268Melting Point1600 °C
Density4.88 g/cm3
Thermal Expansion Coefficient10 × 10-6 K-1
Dielectric Constant22
SrTiO3 Strontium Titanate
Dimensions 5 mm × 5 mm × 0.5 mm
10 mm × 10 mm × 0.5 mm
max. Ø 30 mmGrowth TechniqueVerneuil
Orientation(100)
(110)
(111)Dopingundoped, Nb, Fe
Surface1 side / 2 sides polished
StructureCubic
Lattice Constanta = 0.3905 nm (Perovskite)
Melting Point2080 °C
Density5.175 g/cm3
Thermal Expansion Coefficient10.4 × 10-6 K-1
Dielectric Constant300 @ 300 K
Refractive Index2.25093 @ 2.48 µm
Hardness6 M
TeO2 Tellurium Dioxide
Dimensions10 mm × 10 mm × 0.5 mm
Growth TechniqueCzochralski
Orientation(100)
(110)
(111)Dopingundoped
Surface1 side / 2 sides polished
StructureTetragonal
Lattice Constanta = 0.481 nm
c = 0.761 nmMelting Point730 °C
Density5.99 g/cm3
Thermal Expansion Coefficient19.5 × 10-6 K-1 @ a axis
6.10 × 10-6 K-1 @ c axisDielectric Constant25 @ a axis @ 100 KHz
22 @ c axis @ 100 KHzRefractive Indexn0 = 2.260 @ 630 nm
ne = 2.142 @ 630 nmHardness4.5 M
Tb3Ga5O12 Terbium Gallium Garnet (TGG)
Dimensionsmax. Ø 30 mm
Growth TechniqueCzochralski
Orientation(111)
Dopingundoped
Surface1 side / 2 sides polished
StructureCubic
Lattice Constanta = 1.236 nm
Melting Point1725 °C
Density7.13 g/cm3
Thermal Expansion Coefficient9.4 × 10-6 K-1
Refractive Index1.954 @ 1064 nm
Hardness8 M
TbScO3 Terbium Scandium Oxide
Dimensions10 mm × 10 mm × 0.5 mm
Growth TechniqueCzochralski
Orientation(110)
Dopingundoped
Surface1 side / 2 sides polished
StructureOrthorhombic
Lattice Constanta = 0.545 nm
b = 0.575 nm
c = 0.793 nmMelting Point2127 °C
Density6.60 g/cm3
TiO2 Titanium Dioxide
Dimensions10 mm × 10 mm × 0.5 mm
max. Ø 30 mm
as substrates or prismGrowth TechniqueFloating Zone
Orientation(001)
(110)Dopingundoped
Surface1 side / 2 sides polished
StructureTetragonal (Rutile)
Lattice Constanta = 0.459 nm
c = 0.296 nmMelting Point1840 °C
Density4.26 g/cm3
Thermal Expansion Coefficient7.14 × 10-6 K-1 @ a axis
9.19 × 10-6 K-1 @ c axisDielectric Constant190 @ a axis
85 @ c axisRefractive Indexn0 = 2.47 @ 1.3 μm
ne = 2.73 @ 1.3 μmHardness7 M
YSZ Yttria-Stabilized Zirconia
Dimensions10 mm × 10 mm × 0.5 mm
Ø 2" × 0.5 mmGrowth TechniqueArc Melting
Orientation(100)
(110)
(111)Dopingundoped
Surface1 side / 2 sides polished
Composition8 bzw. 13 mol% Y2O3
StructureCubic
Lattice Constanta = 0.512 nm
Melting Point2500 °C
Density5.8 g/cm3
Thermal Expansion Coefficient10.3 × 10-6 K-1
Dielectric Constant27
Hardness~ 8 M
Y2Al5O12 Yttrium Aluminium Garnet (YAG)
Dimensions10 mm × 10 mm × 0.5 mm
Ø 2" × 0.5 mmGrowth TechniqueCzochralski
Orientation(100)
(110)
(111)Dopingundoped, Nd, Ce
Surface1 side / 2 sides polished
StructureCubic
Lattice Constanta = 1.201 nm
Melting Point1970 °C
Density4.56 g/cm3
Thermal Expansion Coefficient7.8 × 10-6 K-1 @ [111] axis
Refractive Index1.82 @ 632.8 nm
Hardness8.5 M
YAlO3 Yttrium Aluminium Oxide
Dimensions10 mm × 10 mm × 0.5 mm
max. Ø 30 mm × 50 mmGrowth TechniqueCzochralski
Orientation(100)
(110)
(111)Dopingundoped
Surface1 side / 2 sides polished
StructureOrthorhombic
Lattice Constanta = 0.518 nm
b = 0.533 nm
c = 0.737 nmMelting Point1870 °C
Density4.88 g/cm3
Thermal Expansion Coefficient2 - 10 × 10-6 K-1
Dielectric Constant16 - 20
Hardness8 M
YVO4 Yttrium Vanadate
Dimensions5 mm × 5 mm × 0.5 mm
max. Ø 30 mmGrowth TechniqueCzochralski
Orientation(100)
(110)
(111)Dopingundoped. Nb
Surface1 side / 2 sides polished
StructureTetragonal
Lattice Constanta = 0.712 nm
c = 0.629 nmMelting Point1825 °C
Density4.22 g/cm3
Thermal Expansion Coefficient4.33 × 10-6 K-1 @ a axis
11.37 × 10-6 K-1 @ c axisRefractive Index1.95 @ 1340 nm
Hardness4 - 5 M
ZnO Zinc Oxide
Dimensions10 mm × 10 mm × 0.5 mm
max. 20 mm × 20 mm × 10 mmGrowth TechniqueHydrothermal
Orientation(0001)
Dopingundoped. Ga
Surface1 side / 2 sides polished
StructureHexagonal
Lattice Constanta = 0.332 nm
c = 0.521 nmMelting Point1975 °C
Density5.60 g/cm3
Thermal Expansion Coefficient2.9 × 10-6 K-1
Refractive Indexn0 = 1.89 @ 4 μm
ne = 1.91 @ 4 μmHardness4 M
BaB2O4 β-Barium Borate
Dimensions4 mm × 4 mm × 7 mm
8 mm × 4 mm × 7 mm
as substrates or prismGrowth TechniqueCzochralski
Orientationz axis
Dopingundoped
Surface1 side / 2 sides polished
StructureTrigonal
Lattice Constanta = b = 1.253 nm
c = 1.272 nm
Z = 7Melting Point1095 °C
Density3.85 g/cm3
Thermal Expansion Coefficient4.0 × 10-6 K-1 @ a axis
36 × 10-6 K-1 @ c axisRefractive Indexne = 1.5425 @ 1064 nm
n0 = 1.6551 @ 1064 nmHardness4.5 M
Crystals are one of the major pillars of modern semiconductor and optical technologies. Due to the diversity of crystal properties and growth techniques, crystal growth is a highly interdisciplinary subject that requires expertise in physics, chemistry, materials science and engineering.
As the representative of the world’s leading crystal manufacturers Alineason merges various crystal growth techniques into a wide product spectrum of almost all crystals with technological importance, including both bulk crystals and single crystalline wafers and substrates. To meet your particular demand, the crystals can be customized to have individual dimension, doping, and orientation.
Category Specifications
- As large crystals or polished substrates for thin film technologies
- Specifications beyond the standard offer (e.g. dimensions, polishing, orientation and doping) on request