Top-Products

Kristalle

  • Cu Copper

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    Dimensions10 mm × 10 mm × 0.5 mm

    Growth TechniqueBridgman

    Orientation(100)
    (110)
    (111)

    Surface1 sides polished

    StructureCubic (FCC)

    Lattice Constanta = 0.361 nm

    Melting Point1083 °C

    Density8.96 g/cm3

    Thermal Expansion Coefficient16.5 × 10-6 K-1

    Thermal Conductivity401 W cm-1 K-1

    Hardness3 M

    Resistivity16.78 nΩ m @ 20 °C

  • Al Aluminium

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    Dimensions10 mm × 10 mm × 0.5 mmm

    Growth TechniqueBridgman

    Orientation(100)
    (110)
    (111)

    Surface1 sides polished

    StructureCubic (FCC)

    Lattice Constanta = 0.405 nm

    Melting Point660 °C

    Density2.70 g/cm3

    Thermal Expansion Coefficient23.1 × 10-6 K-1

    Thermal Conductivity237 W cm-1 K-1

    Hardness2.75 M

    Resistivity28.2 nΩ m @ 20 °C

  • ZnO Zinc Oxide

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    Dimensions10 mm × 10 mm × 0.5 mm
    max. 20 mm × 20 mm × 10 mm

    Growth TechniqueHydrothermal

    Orientation(0001)

    Dopingundoped. Ga

    Surface1 side / 2 sides polished

    StructureHexagonal

    Lattice Constanta = 0.332 nm
    c = 0.521 nm

    Melting Point1975 °C

    Density5.60 g/cm3

    Thermal Expansion Coefficient2.9 × 10-6 K-1

    Refractive Indexn0 = 1.89 @ 4 μm
    ne = 1.91 @ 4 μm

    Hardness4 M

  • YSZ Yttria-Stabilized Zirconia

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    Dimensions10 mm × 10 mm × 0.5 mm
    Ø 2" × 0.5 mm

    Growth TechniqueArc Melting

    Orientation(100)
    (110)
    (111)

    Dopingundoped

    Surface1 side / 2 sides polished

    Composition8 bzw. 13 mol% Y2O3

    StructureCubic

    Lattice Constanta = 0.512 nm

    Melting Point2500 °C

    Density5.8 g/cm3

    Thermal Expansion Coefficient10.3 × 10-6 K-1

    Dielectric Constant27

    Hardness~ 8 M

  • YAlO3 Yttrium Aluminium Oxide

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    Dimensions10 mm × 10 mm × 0.5 mm
    max. Ø 30 mm × 50 mm

    Growth TechniqueCzochralski

    Orientation(100)
    (110)
    (111)

    Dopingundoped

    Surface1 side / 2 sides polished

    StructureOrthorhombic

    Lattice Constanta = 0.518 nm
    b = 0.533 nm
    c = 0.737 nm

    Melting Point1870 °C

    Density4.88 g/cm3

    Thermal Expansion Coefficient2 - 10 × 10-6 K-1

    Dielectric Constant16 - 20

    Hardness8 M

  • TiO2 Titanium Dioxide

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    Dimensions10 mm × 10 mm × 0.5 mm
    max. Ø 30 mm
    as substrates or prism

    Growth TechniqueFloating Zone

    Orientation(001)
    (110)

    Dopingundoped

    Surface1 side / 2 sides polished

    StructureTetragonal (Rutile)

    Lattice Constanta = 0.459 nm
    c = 0.296 nm

    Melting Point1840 °C

    Density4.26 g/cm3

    Thermal Expansion Coefficient7.14 × 10-6 K-1 @ a axis
    9.19 × 10-6 K-1 @ c axis

    Dielectric Constant190 @ a axis
    85 @ c axis

    Refractive Indexn0 = 2.47 @ 1.3 μm
    ne = 2.73 @ 1.3 μm

    Hardness7 M

  • SrTiO3 Strontium Titanate

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    Dimensions 5 mm × 5 mm × 0.5 mm
    10 mm × 10 mm × 0.5 mm
    max. Ø 30 mm

    Growth TechniqueVerneuil

    Orientation(100)
    (110)
    (111)

    Dopingundoped, Nb, Fe

    Surface1 side / 2 sides polished

    StructureCubic

    Lattice Constanta = 0.3905 nm (Perovskite)

    Melting Point2080 °C

    Density5.175 g/cm3

    Thermal Expansion Coefficient10.4 × 10-6 K-1

    Dielectric Constant300 @ 300 K

    Refractive Index2.25093 @ 2.48 µm

    Hardness6 M

  • SiO2 Silicon Dioxide (Quartz)

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    Dimensions10 mm × 10 mm × 0.5 mm
    max. Ø 4"

    Growth TechniqueHydrothermal

    Orientationx-, y-, z-cut
    30 ° < α < 42.7 °

    Surface1 side / 2 sides polished

    StructureHexagonal

    Lattice Constanta = 0.491 nm
    c = 0.541 nm

    Melting Point1610 °C

    Density2.684 g/cm3

    Thermal Expansion Coefficientα11 = 13.71 × 10-6 K-1
    α33 = 7.480 × 10-6 K-1

    Refractive Index1.52 @ 2.0531 µm

    Hardness7 M

  • PMN-PT (PbMg0.33Nb0.67)1-x(PbTiO3)x

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    Dimensions10 mm × 10 mm × 1 mm
    max. Ø 50 mm × 30 mm

    Growth TechniqueBridgman (modified)

    Orientation(100)
    (110)
    (111)

    Dopingundoped

    Surface1 side / 2 sides polished

    StructureRhombohedral (Pseudo-Cubic)

    Lattice Constanta = 0.402 nm

    Melting Point1280 °C

    Density8.1 g/cm3

    Thermal Expansion Coefficient9.5 × 10-6 K-1 (PT = 0.27 - 0.30)
    > 10 × 10-6 K-1 (PT = 0.30 - 0.33)

    Dielectric Constant4000 - 6000 @ 1kHz

    Refractive Index1.6216 @ 5.4 µm

  • MgO Magnesium Oxide

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    Dimensions10 mm × 10 mm × 0.5 mm
    Ø 2" × 0.5 mm

    Growth TechniqueArc Melting

    Orientation(100)
    (110)
    (111)

    Dopingundoped

    Surface1 side / 2 sides polished

    StructureCubic

    Lattice Constanta = 0.422 nm

    Melting Point2852 °C

    Density3.58 g/cm3

    Thermal Expansion Coefficient12.8 × 10-6 K-1

    Dielectric Constant9.8

    Refractive Index1.6216 @ 5.4 µm

    Hardness5.5 - 6 M

  • MgAl2O4 Magnesium Aluminate

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    DimensionsØ 35 mm × 60 mm

    Growth TechniqueCzochralski

    Orientation(100)
    (110)
    (111)

    Dopingundoped

    Surface1 side / 2 sides polished

    StructureCubic

    Lattice Constanta = 0.808 nm

    Melting Point2130 °C

    Density3.64 g/cm3

    Thermal Expansion Coefficient7.45 × 10-6 K-1

    Refractive Index1.69 @ 1500 nm

    Hardness8 M

  • LSAT (LaAlO3 ) 0,3(Sr2AlTaO6)0,7

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    Dimensions10 mm × 10 mm × 0.5 mm
    max. Ø 2"

    Growth TechniqueCzochralski

    Orientation(100)
    (110)
    (111)

    Dopingundoped

    Surface1 side / 2 sides polished

    StructureCubic

    Lattice Constanta = 0.387 nm

    Melting Point1840 °C

    Density6.74 g/cm3

    Thermal Expansion Coefficient10 × 10-6 K-1

    Dielectric Constant~ 22

    Hardness6.5 M

  • LaAlO3 Lanthanum Aluminate

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    Dimensions10 mm × 10 mm × 0.5 mm
    max. Ø 3"

    Growth TechniqueCzochralski

    Orientation(100)
    (110)
    (111)

    Dopingundoped

    Surface1 side / 2 sides polished

    StructureRhombohedral (Pseudo-Cubic)

    Lattice Constanta = 0.382 nm
    α = 90.5 °

    Melting Point2100 °C

    Density6.52 g/cm3

    Thermal Expansion Coefficient9.2 × 10-6 K-1

    Dielectric Constant24.5

    Hardness6.5 M

  • BaTiO3 Barium Titanate

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    Dimensions5 mm × 5 mm × 0.5 mm
    10 mm × 10 mm × 0.5 mm

    Growth TechniqueTop Seeded Solution Growth

    Orientation(100)
    (110)
    (111)

    Dopingundoped

    Surface1 side / 2 sides polished

    StructureTetragonal (9 °C < T < 130,5 °C)
    Perovskite Type

    Lattice Constanta = 0.399 nm
    c = 0.404 nm

    Melting Point1600 °C

    Density6.02 g/cm3

    Dielectric Constantεa = 3700, εc = 135 (frei)
    εa = 2400, εc = 60 (geklemmt)

    Refractive Indexn0 = 2.416 @ 632.8 nm
    ne = 2.363 @ 632.8 nm

    Hardness5 M

  • Al2O3 Aluminum Oxide (Sapphire)

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    Dimensions10 mm × 10 mm × 0.5 mm
    max. Ø 3"

    Growth TechniqueKyropoulos

    Orientation(11-20) a-cut
    (1-102) r-cut
    (10-10) m-cut
    (0001) c-cut

    Dopingundoped, Cr, Ti

    Surface1 side / 2 sides polished

    StructureHexagonal (Corundum)

    Lattice Constanta = 0.476 nm
    c = 1.299

    Melting Point2040 °C

    Density3.98 g/cm3

    Thermal Expansion Coefficient7.5 × 10-6 K-1

    Dielectric Constant9.40 @ a-axis
    11.58 @ c-axis

  • ZnSe Zinc Selenide

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    Dimensions10 mm × 10 mm × 0.5 mm

    Growth TechniquePhysical Vapor Transport

    Orientation(100)
    (110)
    (111)

    Surface1 side / 2 sides polished

    StructureCubic

    Lattice Constanta = 0.567 nm

    Melting Point1517 °C

    Density5.264 g/cm3

    Thermal Expansion Coefficient7.1 × 10-6K-1

    Dielectric Constant9.7 @ 300 K

    Thermal Conductivity13 W cm-1K-1@ 300 K

    Electron Mobility500 cm2 V-1s-1@ 300 K

    Band Gap2.82 eV

  • Si Silicon

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    DimensionsØ 2" - 6" (max. Ø 8")

    Growth TechniqueCzochralski / Floating Zone

    Orientation(100)
    (110)
    (111)

    Dopingundoped, B, P, As, Sb

    Surface1 side / 2 sides polished

    StructureCubic

    Lattice Constanta = 0.543 nm

    Melting Point1414 °C

    Density2.329 g/cm3

    Thermal Expansion Coefficient5.7 × 10-6K-1

    Band Gap1.1 eV

  • InSb Gallium Antimonide

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    DimensionsØ 2" - 3"

    Growth TechniqueLiquid Encapsulated Czochralski / Bridgman

    Orientation(100)
    (110)
    (111)

    Dopingundoped, Zn, Te

    Surface1 side polished

    StructureCubic (Zincblende)

    Lattice Constanta = 0.648 nm

    Melting Point527 °C

    Density5.77 g/cm3

    Thermal Expansion Coefficient5.37 × 10-6K-1

    Dielectric Constant16.8 @ 300 K

    Thermal Conductivity0.18 W cm-1K-1

    Electron Mobility7.7×104cm2 V-1s-1@ 300 K

    Band Gap0.17 eV

  • InP Indium Phosphide

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    DimensionsØ 2" - 3"

    Growth TechniqueLiquid Encapsulated Czochralski

    Orientation(100)
    (110)
    (111)

    Dopingundoped, Sn, S, Fe, Zn

    Surface1 side / 2 sides polished

    StructureCubic (Zincblende)

    Lattice Constanta = 0.587 nm

    Melting Point1060 °C

    Density4.81 g/cm3

    Thermal Expansion Coefficient4.60 × 10-6K-1

    Dielectric Constant12.5 @ 300 K

    Thermal Conductivity0.68 W cm-1K-1

    Electron Mobility 5400 cm2 V-1s-1@ 300 K

    Band Gap1.344 eV

  • Ge Germanium

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    DimensionsØ 2" - 4"

    Growth TechniqueCzochralski

    Orientation(100)
    (110)
    (111)

    Dopingundoped, In, Ga, Sb

    Surface1 side / 2 sides polished

    StructureCubic

    Lattice Constanta = 0.567 nm

    Melting Point937.4 °C

    Density5.323 g/cm3

    Thermal Expansion Coefficient2.6 × 10-6K-1

    Band Gap0.67 eV

  • CdTe Cadmium Telluride

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    Dimensions10 mm × 10 mm × 0.5 mm

    Growth TechniquePhysical Vapor Transport

    Orientation(100)
    (110)
    (111)

    Surface1 side / 2 sides polished

    StructureCubic

    Lattice Constanta = 0.648 nm

    Melting Point1091 °C

    Density5.85 g/cm3

    Thermal Expansion Coefficient5.9 × 10-6 K-1

    Dielectric Constant11.1 @ 300 K

    Thermal Conductivity6.2 W cm-1 K-1 @ 300 K

    Electron Mobility700 cm2 V-1 s-1 @ 300 K

    Band Gap1.56 eV

  • CdSe Cadmium Selenide

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    Dimensions10 mm × 10 mm × 0.5 mm

    Growth TechniquePhysical Vapor Transport

    Orientation(0001)
    (11-20)
    (10-10)

    Surface1 side / 2 sides polished

    StructureHexagonal

    Lattice Constanta = 0.429 nm
    c = 0.702 nm

    Melting Point1268 °C

    Density5.81 g/cm3

    Thermal Expansion Coefficient6.26 × 10-6 K-1 @ a-Achse
    4.28 × 10-6 K-1 @ c-Achse

    Dielectric Constant10.2 @ 300 K

    Thermal Conductivity0.04 W cm-1 K-1 @ 300 K

    Electron Mobility900 cm2 V-1 s-1 @ 300 K

    Band Gap1.74 eV

Targets

  • ZnSe Zinc Selenide

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    Purity99.9 - 99.99 %

    Density (g/cm³)5.27

    Melting Point (°C)1525

  • ZnS Zinc Sulfide

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    Purity99.9 - 99.99 %

    Density (g/cm³)4.09

    Melting Point (°C)1830

  • V2O5 Vanadium (V) Oxide

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    Purity99.9 - 99.99 %

    Density (g/cm³)3.36

    Melting Point (°C)690

  • SrRuO3 Strontium Ruthenate

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    Purity99.9 - 99.99 %

  • PZT Lead Zirconate Titanate / PbZrxTi1-xO3

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    Purity99.9 - 99.99 %

  • LSCO Lanthanum Strontium Cobalt Oxide / LaxSr1-xCoO3

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    Purity99.9 - 99.99 %

  • LSMO Lanthanum Strontium Manganite / LaxSr1-xMnO3

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    Purity99.9 - 99.99 %

  • ITO Indium Tin Oxide

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    Purity99.99 - 99.999 %

  • IGZO Indium Gallium Zinc Oxide

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    Purity99.99 %

  • BaZrO3 Barium Zirconate

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    Purity99.9 - 99.99 %

    Density (g/cm³)5.52

    Melting Point (°C)2500

  • BaTiO3 Barium Titanate

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    Purity99.9 - 99.99 %

    Density (g/cm³)6.02

    Melting Point (°C)1625

  • AZO Aluminium Zinc Oxide

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    Purity99.9 - 99.999 %

  • Al2O3 Aluminium Oxide

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    Dimensions99.9 - 99.99 %

    Growth Technique3.97

    Orientation2042

  • Ru Ruthenium

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    Purity99.9 - 99.99 %

    Density (g/cm³)12.37

    Melting Point (°C)2334

  • Pt Platinum

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    Purity99.99 %

    Density (g/cm³)21.09

    Melting Point (°C)1768

  • Mn Manganese

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    Purity99.99 %

    Density (g/cm³)7.30

    Melting Point (°C)1244

  • C Carbon

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    Purity99.99 %

    Density (g/cm³)2.26

    Melting Point (°C)3550

  • Bi Bismuth

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    Purity99.9 - 99.999 %

    Density (g/cm³)9.78

    Melting Point (°C)271

Zubehör

  • WTS4 Wafer Carrier Ø 4

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    Item No.Dimension
    (wafer) [inch]
    Dimension
    (outside) [mm]
    Number
    of wafer
    Colorminimum Request
    quantity
    WTS4Ø 4Ø 110 × 121semitransparent
  • WTS2 Wafer Carrier Ø 2

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    Item No.Dimension
    (wafer) [inch]
    Dimension
    (outside) [mm]
    Number
    of wafer
    Colorminimum Request
    quantity
    WTS2Ø 2Ø 60 × 111semitransparent
  • WTS1 Wafer Carrier Ø 1

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    Item No.Dimension
    (wafer) [inch]
    Dimension
    (outside) [mm]
    Number
    of wafer
    Colorminimum Request
    quantity
    WTS1Ø 1Ø 33 × 101semitransparent
  • MB150100 Membrane Box 125 × 125

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    Item No.Dimension
    (membrane) [mm]
    Dimension
    (outside) [mm]
    minimum Request
    quantity
    MB150100125 × 125150 × 150 × 100
  • MB10050 Membrane Box 81 × 81

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    Item No.Dimension
    (membrane) [mm]
    Dimension
    (outside) [mm]
    minimum Request
    quantity
    MB1005081 × 81100 × 100 × 50
  • MB5525 Membrane Box 43 × 43

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    Item No.Dimension
    (membrane) [mm]
    Dimension
    (outside) [mm]
    minimum Request
    quantity
    MB552543 × 4355 × 55 × 25
  • MB3816 Membrane Box 34 × 34

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    Item No.Dimension
    (membrane) [mm]
    Dimension
    (outside) [mm]
    minimum Request
    quantity
    MB381634 × 3438 × 38 × 16
  • GB8512 Gel Box – 85 × 85 × 12

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    Item No.Dimension
    (inside) [mm]
    Dimension
    (outside) [mm]
    Depth
    (top/bottom) [mm]
    Colorminimum Request
    quantity
    GB851281 × 81 × 8.585 × 85 × 126 / 6clear / black / mixed
  • GB7515 Gel Box – 75 × 55 × 15

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    Item No.Dimension
    (inside) [mm]
    Dimension
    (outside) [mm]
    Depth
    (top/bottom) [mm]
    Colorminimum Request
    quantity
    GB751572 × 51 × 1275 × 55 × 157.5 / 7.5clear / black / mixed
  • GB5510A Gel Box – 55 × 55 × 10

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    Item No.Dimension
    (inside) [mm]
    Dimension
    (outside) [mm]
    Depth
    (top/bottom) [mm]
    Colorminimum Request
    quantity
    GB5510A51 × 51 × 755 × 55 × 105 / 5clear / black / mixed

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