You are eager to develop and study a complex multilayer structure but being obstructed by limited time or resources on growing every single material on your own? Let us move the rock away from you!
With our well-established PVD/CVD process and solid experience in thin film growth Alineason can add value to your research activity, in the field of epitaxy, by offering you a wide range of common and special epitaxial films with the best quality. You will be relieved from insignificant task and able to focus on the most important topic.
Category Specifications
- Layer sequence and layer thickness can be defined by customer
- Composition of solid solutions can be varied continuously
- Deposition on coducting bottom layer possible
- Materials or specifications beyond the standard offers on request
| Group | Material | Method | Substrate | Dimension |
| Compound Semiconductors | Arsenide: GaAs, AlGaAs, GaInAs Phosphide: InP, GaInP Nitride: GaN, AlN | MBE / MOVPE | GaAs AlN Sapphire | Ø 2 – 4″ Wafer |
| Lanthanum-containing Oxides | LaxCa1-xMnO3 LaxSr1-xMnO3 LaxSr1-xCoO3 LaxSr1-xSnO3 | PLD | SrTiO3 LSAT NdGaO3 | 5 × 5 mm2 5 × 10 mm2 10 × 10 mm2 |
| Dielectrics / Ferroelectrics | BaTiO3, SrTiO3, BaxSr1-xTiO3 PbTiO3, PbZrO3, PbZrxTi1-xO3 BiFeO3 | PLD | SrTiO3 LSAT MgO NdGaO3 | 5 × 5 mm2 5 × 10 mm2 10 × 10 mm2 |