• GaAs Gallium Arsenide

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    DimensionsØ 2" - 3"

    Growth TechniqueLiquid Encapsulated Czochralski / Bridgman

    Orientation(100)
    (110)
    (111)

    Dopingundoped, Si, Zn, Cr, Te

    Surface1 side polished

    StructureCubic (Zincblende)

    Lattice Constanta = 0.565 nm

    Melting Point1238 °C

    Density5.32 g/cm3

    Thermal Expansion Coefficient5.8 × 10-6K-1

    Dielectric Constant12.85 @ 300 K

    Thermal Conductivity0.55 W cm-1K-1

    Electron Mobility8500 cm2 V-1s-1@ 300 K

    Band Gap1.424 eV