Dimensions10 mm × 10 mm × 0.3 mm

Growth TechniqueMOCVD

Orientation(0001)

Stacking Sequence6H-ABCACB
4H-ABCA

Surface1 side polished (Si Substrat)

StructureHexagonal

Lattice Constanta = 0.308 nm
c = 1.508 nm

Melting Point2700 °C

Density3.217 g/cm³

Thermal Expansion Coefficient10.3 × 10^-6K^-1