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Dimensions10 mm × 10 mm × 0.3 mm
Growth TechniqueMOCVD
Orientation(0001)
Stacking Sequence6H-ABCACB 4H-ABCA
Surface1 side polished (Si Substrat)
StructureHexagonal
Lattice Constanta = 0.308 nm c = 1.508 nm
Melting Point2700 °C
Density3.217 g/cm3
Thermal Expansion Coefficient10.3 × 10-6K-1
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