Semiconductor
CdSe Cadmium Selenide
Dimensions10 mm × 10 mm × 0.5 mm
Growth TechniquePhysical Vapor Transport
Orientation(0001)
(11-20)
(10-10)Surface1 side / 2 sides polished
StructureHexagonal
Lattice Constanta = 0.429 nm
c = 0.702 nmMelting Point1268 °C
Density5.81 g/cm3
Thermal Expansion Coefficient6.26 × 10-6 K-1 @ a-Achse
4.28 × 10-6 K-1 @ c-AchseDielectric Constant10.2 @ 300 K
Thermal Conductivity0.04 W cm-1 K-1 @ 300 K
Electron Mobility900 cm2 V-1 s-1 @ 300 K
Band Gap1.74 eV
CdS Cadmium Sulfide
Dimensions10 mm × 10 mm × 0,5 mm
max. 25 mm × 25 mm × 15 mmGrowth TechniquePhysical Vapor Transport
Orientation(0001)
(11-20)
(10-10)Surface1 side / 2 sides polished
StructureHexagonal
Lattice Constanta = 0.414 nm
c = 0.672 nmMelting Point1287 °C
Density4.82 g/cm3
Thermal Expansion Coefficient4.6 × 10-6 K-1 @ a-Achse
2.5 × 10-6 K-1 @ c-AchseDielectric Constant8.9 @ 300 K
Thermal Conductivity2.7 W cm-1 K-1 @ 300 K
Electron Mobility250 cm2 V-1 s-1 @ 300 K
Band Gap2.42 eV
CdTe Cadmium Telluride
Dimensions10 mm × 10 mm × 0.5 mm
Growth TechniquePhysical Vapor Transport
Orientation(100)
(110)
(111)Surface1 side / 2 sides polished
StructureCubic
Lattice Constanta = 0.648 nm
Melting Point1091 °C
Density5.85 g/cm3
Thermal Expansion Coefficient5.9 × 10-6 K-1
Dielectric Constant11.1 @ 300 K
Thermal Conductivity6.2 W cm-1 K-1 @ 300 K
Electron Mobility700 cm2 V-1 s-1 @ 300 K
Band Gap1.56 eV
InSb Gallium Antimonide
DimensionsØ 2" - 3"
Growth TechniqueLiquid Encapsulated Czochralski / Bridgman
Orientation(100)
(110)
(111)Dopingundoped, Zn, Te
Surface1 side polished
StructureCubic (Zincblende)
Lattice Constanta = 0.648 nm
Melting Point527 °C
Density5.77 g/cm3
Thermal Expansion Coefficient5.37 × 10-6K-1
Dielectric Constant16.8 @ 300 K
Thermal Conductivity0.18 W cm-1K-1
Electron Mobility7.7×104cm2 V-1s-1@ 300 K
Band Gap0.17 eV
GaSb Gallium Antimonide
DimensionsØ 2" - 3"
Growth TechniqueLiquid Encapsulated Czochralski / Bridgman
Orientation(100)
(110)
(111)Dopingundoped, Zn, Te
Surface1 side polished
StructureCubic (Zincblende)
Lattice Constanta = 0.609 nm
Melting Point712 °C
Density5.61 g/cm3
Thermal Expansion Coefficient7.75 × 10-6K-1
Dielectric Constant15.7 @ 300 K
Thermal Conductivity0.32 W cm-1K-1
Electron Mobility3000 cm2 V-1s-1@ 300 K
Band Gap0.726 eV
GaAs Gallium Arsenide
DimensionsØ 2" - 3"
Growth TechniqueLiquid Encapsulated Czochralski / Bridgman
Orientation(100)
(110)
(111)Dopingundoped, Si, Zn, Cr, Te
Surface1 side polished
StructureCubic (Zincblende)
Lattice Constanta = 0.565 nm
Melting Point1238 °C
Density5.32 g/cm3
Thermal Expansion Coefficient5.8 × 10-6K-1
Dielectric Constant12.85 @ 300 K
Thermal Conductivity0.55 W cm-1K-1
Electron Mobility8500 cm2 V-1s-1@ 300 K
Band Gap1.424 eV
GaP Gallium Phosphide
DimensionsØ 2"
Growth TechniqueLiquid Encapsulated Czochralski
Orientation(100)
(110)
(111)Dopingundoped, S
Surface1 side polished
StructureCubic (Zincblende)
Lattice Constanta = 0.545 nm
Melting Point1477 °C
Density4.14 g/cm3
Thermal Expansion Coefficient4.65 × 10-6K-1
Dielectric Constant11.1 @ 300 K
Thermal Conductivity1.1 W cm-1K-1
Electron Mobility250 cm2 V-1s-1@ 300 K
Band Gap2.26 eV
Ge Germanium
DimensionsØ 2" - 4"
Growth TechniqueCzochralski
Orientation(100)
(110)
(111)Dopingundoped, In, Ga, Sb
Surface1 side / 2 sides polished
StructureCubic
Lattice Constanta = 0.567 nm
Melting Point937.4 °C
Density5.323 g/cm3
Thermal Expansion Coefficient2.6 × 10-6K-1
Band Gap0.67 eV
InAs Indium Arsenide
DimensionsØ 2" - 4"
Growth TechniqueLiquid Encapsulated Czochralski
Orientation(100)
(110)
(111)Dopingundoped
Surface1 side polished
StructureCubic (Zincblende)
Lattice Constanta = 0.606 nm
Melting Point942 °C
Density5.68 g/cm3
Thermal Expansion Coefficient4.52 × 10-6K-1
Dielectric Constant15.15 @ 300 K
Thermal Conductivity0.27 W cm-1K-1
Electron Mobility≤ 4×104cm2 V-1s-1@ 300 K
Band Gap0.354 eV
InP Indium Phosphide
DimensionsØ 2" - 3"
Growth TechniqueLiquid Encapsulated Czochralski
Orientation(100)
(110)
(111)Dopingundoped, Sn, S, Fe, Zn
Surface1 side / 2 sides polished
StructureCubic (Zincblende)
Lattice Constanta = 0.587 nm
Melting Point1060 °C
Density4.81 g/cm3
Thermal Expansion Coefficient4.60 × 10-6K-1
Dielectric Constant12.5 @ 300 K
Thermal Conductivity0.68 W cm-1K-1
Electron Mobility≤ 5400 cm2 V-1s-1@ 300 K
Band Gap1.344 eV
Si Silicon
DimensionsØ 2" - 6" (max. Ø 8")
Growth TechniqueCzochralski / Floating Zone
Orientation(100)
(110)
(111)Dopingundoped, B, P, As, Sb
Surface1 side / 2 sides polished
StructureCubic
Lattice Constanta = 0.543 nm
Melting Point1414 °C
Density2.329 g/cm3
Thermal Expansion Coefficient5.7 × 10-6K-1
Band Gap1.1 eV
SiC Silicon Carbide
Dimensions10 mm × 10 mm × 0.3 mm
Growth TechniqueMOCVD
Orientation(0001)
Stacking Sequence6H-ABCACB
4H-ABCASurface1 side polished (Si Substrat)
StructureHexagonal
Lattice Constanta = 0.308 nm
c = 1.508 nmMelting Point2700 °C
Density3.217 g/cm3
Thermal Expansion Coefficient10.3 × 10-6K-1
ZnSe Zinc Selenide
Dimensions10 mm × 10 mm × 0.5 mm
Growth TechniquePhysical Vapor Transport
Orientation(100)
(110)
(111)Surface1 side / 2 sides polished
StructureCubic
Lattice Constanta = 0.567 nm
Melting Point1517 °C
Density5.264 g/cm3
Thermal Expansion Coefficient7.1 × 10-6K-1
Dielectric Constant9.7 @ 300 K
Thermal Conductivity13 W cm-1K-1@ 300 K
Electron Mobility500 cm2 V-1s-1@ 300 K
Band Gap2.82 eV
ZnS Zinc Sulfide
Dimensions10 mm × 10 mm × 0.5 mm
Growth TechniqueBridgman
Orientation(100)
(110)
(111)Surface1 side / 2 sides polished
StructureCubic
Lattice Constanta = 0.541 nm
Melting Point1830 °C
Density4.09 g/cm3
Thermal Expansion Coefficient6.6 × 10-6K-1
Dielectric Constant8.3 @ 300 K
Thermal Conductivity16.7 W cm-1K-1@ 300 K
Electron Mobility340 cm2 V-1s-1@ 300 K
Band Gap3.54 eV
ZnTe Zinc Telluride
Dimensions10 mm × 10 mm × 0.5 mm
Growth TechniqueBridgman
Orientation(100)
(110)
(111)Surface1 side / 2 sides polished
StructureCubic
Lattice Constanta = 0.610nm
Melting Point1295 °C
Density5.63 g/cm3
Thermal Expansion Coefficient8.3 × 10-6K-1
Dielectric Constant9.7 @ 300 K
Thermal Conductivity0.108 W cm-1K-1@ 300 K
Electron Mobility350 cm2 V-1s-1@ 300 K
Band Gap2.23 eV
Crystals are one of the major pillars of modern semiconductor and optical technologies. Due to the diversity of crystal properties and growth techniques, crystal growth is a highly interdisciplinary subject that requires expertise in physics, chemistry, materials science and engineering.
As the representative of the world’s leading crystal manufacturers Alineason merges various crystal growth techniques into a wide product spectrum of almost all crystals with technological importance, including both bulk crystals and single crystalline wafers and substrates. To meet your particular demand, the crystals can be customized to have individual dimension, doping, and orientation.
Category Specifications
- Wafers and substrates of elementary and compound semiconductors
- Specifications beyond the standard offers (e.g. dimensions, polishing, orientation and doping) on request