Showing 305–320 of 411 results

• Si Silicon

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  Purity99.999 %

  Density (g/cm³)2.32

  Melting Point (°C)1410

  Evaporation Temperature (°C)1337

  ShapeGranules

• SZO Silicon Zirconium Oxide

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  Purity99.9 - 99.99 %

• SiC Silicon Carbide

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  Purity99.9 - 99.999 %

  Density (g/cm³)3.22

  Melting Point (°C)2700

• SiO₂ Silicon Dioxide

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  Purity99.9 - 99.999 %

  Density (g/cm³)2.65

  Melting Point (°C)1610

• SiO₂ Silicon Dioxide

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  Purity99.99 - 99.999 %

  Density (g/cm³)2.20

  Melting Point (°C)1610

  Evaporation Temperature (°C)1600 - 2200

  ShapeGranules

• SiO₂ Silicon Dioxide (Quartz)

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  Dimensions10 mm × 10 mm × 0.5 mm
  max. Ø 4"

  Growth TechniqueHydrothermal

  Orientationx-, y-, z-cut
  30 ° < α < 42.7 °

  Surface1 side / 2 sides polished

  StructureHexagonal

  Lattice Constanta = 0.491 nm
  c = 0.541 nm

  Melting Point1610 °C

  Density2.684 g/cm³

  Thermal Expansion Coefficientα₁₁ = 13.71 × 10^-6 K^-1
  α₃₃ = 7.480 × 10^-6 K^-1

  Refractive Index1.52 @ 2.0531 µm

  Hardness7 M

• SiC Silicon Carbide

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  Dimensions10 mm × 10 mm × 0.3 mm

  Growth TechniqueMOCVD

  Orientation(0001)

  Stacking Sequence6H-ABCACB
  4H-ABCA

  Surface1 side polished (Si Substrat)

  StructureHexagonal

  Lattice Constanta = 0.308 nm
  c = 1.508 nm

  Melting Point2700 °C

  Density3.217 g/cm³

  Thermal Expansion Coefficient10.3 × 10^-6K^-1

• SiO Silicon Monooxide

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  Purity99.9 - 99.99 %

  Density (g/cm³)2.13

  Melting Point (°C)1702

• SiO Silicon Monooxide

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  Purity99.99 - 99.999 %

  Density (g/cm³)2.10

  Melting Point (°C)Sublimation

  Evaporation Temperature (°C)1200 - 1600

  ShapeGranules

• Si₃N₄ Silicon Nitride

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  Purity99.9 - 99.99 %

  Density (g/cm³)3.44

  Melting Point (°C)1900

• Si₃N₄ Silicon Nitride

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  Purity99.9 - 99.999 %

  Density (g/cm³)3.44

  Melting Point (°C)1900

  Evaporation Temperature (°C)800

  ShapeGranules

• Sr_xBa_1-xNb₂O₆ Strontium Barium Niobate (SBN)

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  Dimensionsmax. 20 mm × 20 mm × 1 mm

  Growth TechniqueCzochralski

  Orientation(100)

  Dopingundoped

  Surface1 side / 2 sides polished

  Stoichiometry0.60 < x < 0.75

  StructureTetragonal

  Lattice Constanta = 0.395 nm
  b = 1.246 nm

  Melting Point1500 °C

  Density5.40 g/cm³

  Dielectric Constantε₁₁ = 450
  ε₃₂ = 900

  Refractive Indexn₀ = 2.312
  n_e = 2.273

  Hardness5.5 M

• SrLaGaO₄ Strontium Lanthanum Gallate

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  Dimensionsmax. Ø 1"

  Growth TechniqueCzochralski

  Orientation(100)
  (110)
  (001)

  Dopingundoped

  Surface1 side / 2 sides polished

  StructureTetragonal

  Lattice Constanta = 0.384 nm
  c = 1.268

  Melting Point1600 °C

  Density4.88 g/cm³

  Thermal Expansion Coefficient10 × 10^-6 K^-1

  Dielectric Constant22

• SrF₂ Strontium Fluoride

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  Purity99.9 - 99.99 %

  Density (g/cm³)4.26

  Melting Point (°C)1450

• SrF₂ Strontium Fluoride

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  Purity99.9 - 99.99 %

  Density (g/cm³)4.26

  Melting Point (°C)1450

  Evaporation Temperature (°C)1200

  ShapeGranules

• SrRuO₃ Strontium Ruthenate

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  Purity99.9 - 99.99 %