Showing 145–160 of 411 results

• Eu₂O₃ Europium Oxide

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  Purity99.9 - 99.99 %

  Density (g/cm³)7.42

  Melting Point (°C)2350

  Evaporation Temperature (°C)1600

  ShapeGranules / Disks

• Gd Gadolinium

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  Purity99.9 - 99.99 %

  Density (g/cm³)7.90

  Melting Point (°C)1313

• Gd Gadolinium

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  Purity99.9 - 99.99 %

  Density (g/cm³)7.90

  Melting Point (°C)1311

  Evaporation Temperature (°C)1175

  ShapeGranules

• Gd₃Ga₅O₁₂ Gadolinium Gallium Garnet (GGG)

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  Dimensions10 mm × 10 mm × 0.5 mm
  max. Ø 3'' × 100 mm

  Growth TechniqueCzochralski

  Orientation(111)

  Dopingundoped

  Surface1 side / 2 sides polished

  StructureCubic

  Lattice Constanta = 1.238 nm

  Melting Point1750 °C

  Density7.08 g/cm³

  Thermal Expansion Coefficient8.2 × 10^-6 K^-1

  Dielectric Constant30

  Hardness7.5 M

• Gd₂O₃ Gadolinium Oxide

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  Purity99.9 - 99.99 %

  Density (g/cm³)7.40

  Melting Point (°C)2310

• Gd₂O₃ Gadolinium Oxide

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  Purity99.9 - 99.99 %

  Density (g/cm³)7.40

  Melting Point (°C)2310

  Evaporation Temperature (°C)2200

  ShapeGranules / Disks

• GZO Gallium Zinc Oxide

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  Purity99.9 - 99.99 %

• GaSb Gallium Antimonide

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  DimensionsØ 2" - 3"

  Growth TechniqueLiquid Encapsulated Czochralski / Bridgman

  Orientation(100)
  (110)
  (111)

  Dopingundoped, Zn, Te

  Surface1 side polished
  

  StructureCubic (Zincblende)

  Lattice Constanta = 0.609 nm

  Melting Point712 °C

  Density5.61 g/cm³

  Thermal Expansion Coefficient7.75 × 10^-6K^-1

  Dielectric Constant15.7 @ 300 K

  Thermal Conductivity0.32 W cm^-1K^-1

  Electron Mobility3000 cm² V^-1s^-1@ 300 K

  Band Gap0.726 eV

• GaAs Gallium Arsenide

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  DimensionsØ 2" - 3"

  Growth TechniqueLiquid Encapsulated Czochralski / Bridgman

  Orientation(100)
  (110)
  (111)

  Dopingundoped, Si, Zn, Cr, Te

  Surface1 side polished

  StructureCubic (Zincblende)

  Lattice Constanta = 0.565 nm

  Melting Point1238 °C

  Density5.32 g/cm³

  Thermal Expansion Coefficient5.8 × 10^-6K^-1

  Dielectric Constant12.85 @ 300 K

  Thermal Conductivity0.55 W cm^-1K^-1

  Electron Mobility8500 cm² V^-1s^-1@ 300 K

  Band Gap1.424 eV

• Ga₂O₃ Gallium Oxide

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  Purity99.9 - 99.99 %

  Density (g/cm³)5.88

  Melting Point (°C)1725

• GaP Gallium Phosphide

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  DimensionsØ 2"

  Growth TechniqueLiquid Encapsulated Czochralski

  Orientation(100)
  (110)
  (111)

  Dopingundoped, S

  Surface1 side polished

  StructureCubic (Zincblende)

  Lattice Constanta = 0.545 nm

  Melting Point1477 °C

  Density4.14 g/cm³

  Thermal Expansion Coefficient4.65 × 10^-6K^-1

  Dielectric Constant11.1 @ 300 K

  Thermal Conductivity1.1 W cm^-1K^-1

  Electron Mobility250 cm² V^-1s^-1@ 300 K

  Band Gap2.26 eV

• GaP Gallium Phosphide

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  Purity99.9 - 99.999 %

  Density (g/cm³)4.10

  Melting Point (°C)1540

• Ge Germanium

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  DimensionsØ 2" - 4"

  Growth TechniqueCzochralski

  Orientation(100)
  (110)
  (111)

  Dopingundoped, In, Ga, Sb

  Surface1 side / 2 sides polished

  StructureCubic

  Lattice Constanta = 0.567 nm

  Melting Point937.4 °C

  Density5.323 g/cm³

  Thermal Expansion Coefficient2.6 × 10^-6K^-1

  Band Gap0.67 eV

• Ge Germanium

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  Purity99.99 - 99.9999 %

  Density (g/cm³)5.32

  Melting Point (°C)938

• Ge Germanium

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  Purity99.999 %

  Density (g/cm³)5.32

  Melting Point (°C)937

  Evaporation Temperature (°C)1167

  ShapeGranules

• Au Gold

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  Dimensions10 mm × 10 mm × 0.5 mm

  Growth TechniqueBridgman

  Orientation(100)
  (110)
  (111)

  Stacking Sequence1 sides polished

  StructureCubic (FCC)

  Lattice Constanta = 0.408 nm

  Melting Point1064 °C

  Density19.3 g/cm³

  Thermal Expansion Coefficient14.2 × 10^-6 K^-1

  Thermal Conductivity318 W cm-1 K-1

  Hardness2.5 M

  Resistivity22.14 nΩ m @ 20 °C