Showing 177–192 of 411 results

• InSb Indium Antimonide

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  Purity99.999 %

  Density (g/cm³)5.80

  Melting Point (°C)527

• InAs Indium Arsenide

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  DimensionsØ 2" - 4"

  Growth TechniqueLiquid Encapsulated Czochralski

  Orientation(100)
  (110)
  (111)

  Dopingundoped

  Surface1 side polished

  StructureCubic (Zincblende)

  Lattice Constanta = 0.606 nm

  Melting Point942 °C

  Density5.68 g/cm³

  Thermal Expansion Coefficient4.52 × 10^-6K^-1

  Dielectric Constant15.15 @ 300 K

  Thermal Conductivity0.27 W cm^-1K^-1

  Electron Mobility≤ 4×10⁴cm² V^-1s^-1@ 300 K

  Band Gap0.354 eV

• In % Indium base

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  Standard AlloyPurityComposition

  In - Sn99.9 - 99.999 %

  In - Sn - Ga99.9 - 99.999 %

• In₂O₃ Indium Oxide

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  Purity99.9 - 99.99 %

  Density (g/cm³)7.18

  Melting Point (°C)1910

• In₂O₃ Indium Oxide

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  Purity99.99 - 99.999 %

  Density (g/cm³)7.20

  Melting Point (°C)1900

  Evaporation Temperature (°C)600

  ShapeGranules / Disks

• In₂O₃ / SnO₂ Indium Oxide / Tin Oxide

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  Purity99.99 %

  Composition90 / 10, 95 / 5

  ShapeGranules / Disks

• InP Indium Phosphide

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  DimensionsØ 2" - 3"

  Growth TechniqueLiquid Encapsulated Czochralski

  Orientation(100)
  (110)
  (111)

  Dopingundoped, Sn, S, Fe, Zn

  Surface1 side / 2 sides polished

  StructureCubic (Zincblende)

  Lattice Constanta = 0.587 nm

  Melting Point1060 °C

  Density4.81 g/cm³

  Thermal Expansion Coefficient4.60 × 10^-6K^-1

  Dielectric Constant12.5 @ 300 K

  Thermal Conductivity0.68 W cm^-1K^-1

  Electron Mobility≤ 5400 cm² V^-1s^-1@ 300 K

  Band Gap1.344 eV

• InP Indium Phosphide

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  Purity99.9 - 99.999 %

  Density (g/cm³)4.80

  Melting Point (°C)1070

• In₂Se₃ Indium Selenide

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  Purity99.9 - 99.999 %

  Density (g/cm³)5.67

  Melting Point (°C)890

• In₂S₃ Indium Sulfide

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  Purity99.9 - 99.99 %

  Density (g/cm³)5.87

  Melting Point (°C)653

• Ir Iridium

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  Purity99.95 %

  Density (g/cm³)22.50

  Melting Point (°C)2410

• Ir % Iridium base

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  Standard AlloyPurityComposition

  Ir - Mn99.9 %

  Ir - Re99.9 %

• KTiOPO₃ Potassium Titanyl Phosphate (KTP)

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  Dimensions10 mm × 10 mm × 0.5 mm
  10 mm × 10 mm × 15 mm
  as substrates or prism

  Growth TechniqueHydrothermal

  Orientation(001) z-cut

  Dopingundoped

  Surface1 side / 2 sides polished

  StructureOrthorhombic

  Lattice Constanta = 0.640 nm
  b = 1.062 nm
  c = 1.281 nm
  Z = 8

  Melting Point~ 1172 °C (noncongruently)

  Density3.01 g/cm³

  Thermal Expansion Coefficient11.0 × 10^-6 K^-1 @ a-axis
  9.0 × 10^-6 K^-1 @ b-axis
  0.6 × 10^-6 K^-1 @ c-axis

  Refractive Index1.7787 @ a-axis @ 532 nm
  1.7924 @ b-axis @ 532 nm
  1.8873 @ c-axis @ 532 nm

  Hardness5 M

• KBr Potassium Bromide

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  Dimensions10 mm × 10 mm × 1 mm

  Growth TechniqueKyropoulos

  Orientation(100)
  (110)

  Dopingundoped

  Surface1 side / 2 sides polished

  StructureCubic

  Lattice Constanta = 0.660 nm

  Melting Point728 °C

  Density2.75 g/cm³

  Thermal Expansion Coefficient38.5 × 10^-6 K^-1

  Refractive Index1.298 @ 40 μm

  Hardness1.5 M

• KCl Potassium Chloride

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  Dimensions10 mm × 10 mm × 1 mm

  Growth TechniqueKyropoulos

  Orientation(100)
  (110)

  Dopingundoped

  Surface1 side / 2 sides polished

  StructureCubic

  Lattice Constanta = 0.629 nm

  Melting Point776 °C

  Density1.98 g/cm³

  Thermal Expansion Coefficient36.6 × 10^-6 K^-1

  Refractive Index1.147 @ 35 μm

  Hardness2 M

• KF Potassium Fluoride

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  Purity99.9 - 99.99 %

  Density (g/cm³)2.48

  Melting Point (°C)880