Halogenide

  • BaF2 Barium Fluoride

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    Dimensionsmax. Ø 2” × 80 mm

    Growth TechniqueBridgman

    Orientation(111)

    Dopingundoped

    Surface1 side / 2 sides polished

    StructureCubic

    Lattice Constanta = 0.620 nm

    Melting Point1368 °C

    Density4.893 g/cm3

    Thermal Expansion Coefficient16.5 × 10-6 K-1

    Refractive Index1.397 @ 10.3 μm

    Hardness3 M

  • Csl Caesium Iodide

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    Dimensions10 mm × 10 mm × 0.5 mm
    max. Ø 100 mm × 300 mm

    Growth TechniqueBridgman / Czochralski

    Orientation(111)

    Dopingundoped, Tl, Na

    Surface1 side / 2 sides polished

    StructureCubic

    Lattice Constanta = 0.457 nm

    Melting Point894 °C

    Density4.51 g/cm3

    Thermal Expansion Coefficient39.1 × 10-6 K-1

    Refractive Index1.637 @ 50 μm

    Hardness2 M

  • CaF2 Calcium Fluoride

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    DimensionsØ 2" - 4"
    max. Ø 8" × 150 mm

    Growth TechniqueBridgman

    Orientation(111)

    Dopingundoped

    Surface1 side / 2 sides polished

    StructureCubic

    Lattice Constanta = 0.546 nm

    Melting Point1418 °C

    Density3.18 g/cm3

    Refractive Index1.308 @ 9.7 μm

    Hardness4 M

  • LaF3 Lanthanfluorid

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    Dimensions10 mm × 10 mm × 0.5 mm
    max. Ø 50 mm

    Growth TechniqueBridgman

    Orientation(0001)

    Dopingundoped

    Surface1 side / 2 sides polished

    StructureTrigonal

    Lattice Constanta = b = 0.719 nm
    c = 0.737 nm
    α = β = 90 °
    γ = 120 °

    Melting Point1493 °C

    Density5.94 g/cm3

    Thermal Expansion Coefficient11.9 × 10-6 K-1 @ a-Achse
    15.8 × 10-6 K-1 @ c-Achse

    Refractive Index1.601 @ 0.7 μm

    Hardness4.5 M

  • LiF Lithium Fluoride

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    Dimensionsmax. Ø 4” × 80 mm

    Growth TechniqueBridgman

    Orientation(100)

    Dopingundoped

    Surface1 side / 2 sides polished

    StructureCubic

    Lattice Constanta = 0.403 nm

    Melting Point845 °C

    Density2.60 g/cm3

    Thermal Expansion Coefficient34.3 × 10-6 K-1

    Refractive Index1.390 @ 11 μm

    Hardness4 M

  • MgF2 Magnesium Fluoride

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    Dimensionsmax. Ø 4" × 100 mm

    Growth TechniqueBridgman

    Orientation(100)
    (110)

    Dopingundoped

    Surface1 side / 2 sides polished

    StructureTetragonal

    Lattice Constanta = 0.462 nm
    c = 0.305 nm

    Melting Point1255 °C

    Density3.17 g/cm3

    Thermal Expansion Coefficient13.7 × 10-6 K-1

    Refractive Index1.291 @ 7μm

    Hardness6 M

  • KBr Potassium Bromide

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    Dimensions10 mm × 10 mm × 1 mm

    Growth TechniqueKyropoulos

    Orientation(100)
    (110)

    Dopingundoped

    Surface1 side / 2 sides polished

    StructureCubic

    Lattice Constanta = 0.660 nm

    Melting Point728 °C

    Density2.75 g/cm3

    Thermal Expansion Coefficient38.5 × 10-6 K-1

    Refractive Index1.298 @ 40 μm

    Hardness1.5 M

  • KCl Potassium Chloride

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    Dimensions10 mm × 10 mm × 1 mm

    Growth TechniqueKyropoulos

    Orientation(100)
    (110)

    Dopingundoped

    Surface1 side / 2 sides polished

    StructureCubic

    Lattice Constanta = 0.629 nm

    Melting Point776 °C

    Density1.98 g/cm3

    Thermal Expansion Coefficient36.6 × 10-6 K-1

    Refractive Index1.147 @ 35 μm

    Hardness2 M

  • NaCl Sodium Chloride

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    Dimensions10 mm × 10 mm × 1 mm
    max. Ø 120 mm × 100 mm

    Growth TechniqueKyropoulos

    Orientation(100)
    (110)

    Dopingundoped

    Surface1 side / 2 sides polished

    StructureCubic

    Lattice Constanta = 0.564 nm

    Melting Point801 °C

    Density2.17 g/cm3

    Thermal Expansion Coefficient36.4 × 10-6 K-1

    Refractive Index1.091 @ 30 μm

    Hardness3 M

  • Nal Sodium Iodide

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    Dimensions10 mm × 10 mm × 1 mm
    max. Ø 100 mm × 300 mm

    Growth TechniqueBridgman

    Orientation(100)
    (110)

    Dopingundoped

    Surface1 side / 2 sides polished

    StructureCubic

    Lattice Constanta = 0.646 nm

    Melting Point661 °C

    Density3.67 g/cm3

    Thermal Expansion Coefficient47.7 × 10-6 K-1

    Refractive Index1.356 @ 40 μm

    Hardness2 M

Crystals are one of the major pillars of modern semiconductor and optical technologies. Due to the diversity of crystal properties and growth techniques, crystal growth is a highly interdisciplinary subject that requires expertise in physics, chemistry, materials science and engineering.

As the representative of the world’s leading crystal manufacturers Alineason merges various crystal growth techniques into a wide product spectrum of almost all crystals with technological importance, including both bulk crystals and single crystalline wafers and substrates. To meet your particular demand, the crystals can be customized to have individual dimension, doping, and orientation.

Category Specifications

  • Crystals for optical technologies
  • Available as window and prism as well as substrate
  • Specifications beyond the standard offers or fabrication of special forms on request