• InP Indium Phosphide

    Add to list

    DimensionsØ 2" - 3"

    Growth TechniqueLiquid Encapsulated Czochralski

    Orientation(100)
    (110)
    (111)

    Dopingundoped, Sn, S, Fe, Zn

    Surface1 side / 2 sides polished

    StructureCubic (Zincblende)

    Lattice Constanta = 0.587 nm

    Melting Point1060 °C

    Density4.81 g/cm3

    Thermal Expansion Coefficient4.60 × 10-6K-1

    Dielectric Constant12.5 @ 300 K

    Thermal Conductivity0.68 W cm-1K-1

    Electron Mobility 5400 cm2 V-1s-1@ 300 K

    Band Gap1.344 eV