• InAs Indium Arsenide

    Add to list

    DimensionsØ 2" - 4"

    Growth TechniqueLiquid Encapsulated Czochralski

    Orientation(100)
    (110)
    (111)

    Dopingundoped

    Surface1 side polished

    StructureCubic (Zincblende)

    Lattice Constanta = 0.606 nm

    Melting Point942 °C

    Density5.68 g/cm3

    Thermal Expansion Coefficient4.52 × 10-6K-1

    Dielectric Constant15.15 @ 300 K

    Thermal Conductivity0.27 W cm-1K-1

    Electron Mobility≤ 4×104cm2 V-1s-1@ 300 K

    Band Gap0.354 eV