• GaP Gallium Phosphide

    Add to list

    DimensionsØ 2"

    Growth TechniqueLiquid Encapsulated Czochralski

    Orientation(100)
    (110)
    (111)

    Dopingundoped, S

    Surface1 side polished

    StructureCubic (Zincblende)

    Lattice Constanta = 0.545 nm

    Melting Point1477 °C

    Density4.14 g/cm3

    Thermal Expansion Coefficient4.65 × 10-6K-1

    Dielectric Constant11.1 @ 300 K

    Thermal Conductivity1.1 W cm-1K-1

    Electron Mobility250 cm2 V-1s-1@ 300 K

    Band Gap2.26 eV