• GaSb Gallium Antimonide

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    DimensionsØ 2" - 3"

    Growth TechniqueLiquid Encapsulated Czochralski / Bridgman

    Orientation(100)
    (110)
    (111)

    Dopingundoped, Zn, Te

    Surface1 side polished

    StructureCubic (Zincblende)

    Lattice Constanta = 0.609 nm

    Melting Point712 °C

    Density5.61 g/cm3

    Thermal Expansion Coefficient7.75 × 10-6K-1

    Dielectric Constant15.7 @ 300 K

    Thermal Conductivity0.32 W cm-1K-1

    Electron Mobility3000 cm2 V-1s-1@ 300 K

    Band Gap0.726 eV